Semiconductor light emitting device with light extraction structures

ABSTRACT

Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

BACKGROUND Description of Related Art

Semiconductor light-emitting devices including light emitting diodes(LEDs), resonant cavity light emitting diodes (RCLEDs), vertical cavitylaser diodes (VCSELs), and edge emitting lasers are among the mostefficient light sources currently available. Materials systems currentlyof interest in the manufacture of high-brightness light emitting devicescapable of operation across the visible spectrum include Group III-Vsemiconductors, particularly binary, ternary, and quaternary alloys ofgallium, aluminum, indium, and nitrogen, also referred to as III-nitridematerials. Typically, III-nitride light emitting devices are fabricatedby epitaxially growing a stack of semiconductor layers of differentcompositions and dopant concentrations on a sapphire, silicon carbide,III-nitride, or other suitable substrate by metal-organic chemical vapordeposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxialtechniques. The stack often includes one or more n-type layers dopedwith, for example, Si, formed over the substrate, one or more lightemitting layers in an active region formed over the n-type layer orlayers, and one or more p-type layers doped with, for example, Mg,formed over the active region. Electrical contacts are formed on the n-and p-type regions.

SUMMARY

In accordance with embodiments of the invention, structures areincorporated into a light emitting device which may increase theextraction of light emitted at glancing incidence angles. The lightemitting device may be, for example, a III-nitride thin-film flip-chiplight emitting diode.

In some embodiments, the device includes a structure that directs lightaway from the metal contacts by total internal reflection. For example,the device may include a semiconductor structure comprising a lightemitting layer disposed between an n-type region and a p-type region. Areflective metal contact is disposed on the bottom side of thesemiconductor structure and is electrically connected to the p-typeregion. A low index material is disposed between at least a portion ofthe reflective metal contact and the p-type region. The difference inrefractive index between the low index material and the p-type region,and the thickness of the low-index layer, are selected to ensure totalinternal reflection of glancing angle light. For example, the differencebetween the index of refraction of the low index material and the indexof refraction of the p-type region may be at least 0.4. The interfacebetween the semiconductor structure and the low index material isconfigured to efficiently reflect light incident on the interface atglancing angles, i.e. at angles greater than 70° relative to a normal toa major plane of the light emitting layer.

In some embodiments, the device includes extraction features which mayextract glancing angle light directly, or direct the glancing anglelight into smaller incidence angles which are more easily extracted fromthe device. For example, the features may be cavities in thesemiconductor structure which extend from the top or bottom surface ofthe semiconductor structure. The cavities may have sidewalls oriented atan angle between 35 and 55° relative to a major surface of the lightemitting layer. The sidewalls of the cavities may be fully or partiallylined with a dielectric material. The cavities may be filled with ametal. In some embodiments, the metal makes electric contact with then-type region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a III-nitride thin-film flip-chip light emittingdevice.

FIG. 2 illustrates a III-nitride device with a photonic crystal formedin the top surface.

FIG. 3 illustrates a device with a nonconductive low index layerdisposed between the semiconductor structure and a metal contact.

FIG. 4 illustrates a device with a conductive low index layer disposedbetween the semiconductor structure and a metal contact.

FIG. 5 illustrates a device with an oxidized low index layer formed in aportion of the semiconductor structure.

FIG. 6 illustrates a device including light extraction features thatextend into the semiconductor structure from the surface on which thep-contact is formed.

FIG. 7 illustrates a device including light extraction features thatextend into the semiconductor structure from the surface from whichlight exits the device.

FIG. 8 is a plot of extraction as a function of angle of incidence,which illustrates the one-pass extraction efficiency for a plane waveimpinging on a GaN/air photonic crystal (whose period and depth are ofthe order of a wavelength).

FIG. 9 is a plot of extraction as a function of angle of incidence,which illustrates the one-pass specular reflection (e.g. the fraction oflight which is backscattered with the same angle as its incidence angle)for the same structure as FIG. 8.

FIG. 10 is a plot of reflectivity as a function of angle of incidencefor a device with a GaN p-type region, a SiO₂ low index layer, and a Agcontact, for three different thicknesses of SiO₂.

FIG. 11 illustrates a device including light extraction features coatedwith a thin dielectric layer and filled with metal.

FIG. 12 illustrates a device including light extraction features whichare partially coated by a dielectric layer and also serve as n-contacts.

FIG. 13 is a top view of the layout of light extraction features andn-contacts in a device.

FIGS. 14A and 14B illustrate light rays incident on a GaN/low indexmaterial/metal interface. FIG. 14A shows two rays propagating in a thinlow index layer. FIG. 14B shows a ray propagating in a thick low-indexlayer.

FIG. 15 illustrates reflectivity as a function of angle of incidence andof thickness t of the SiO₂ layer for a GaN/SiO₂/Ag structure.

DETAILED DESCRIPTION

FIG. 1 illustrates a III-nitride flip-chip, thin-film LED described inmore detail in U.S. Pat. No. 7,256,483, which is incorporated herein byreference. N-type layers 16, an active layer 18, and p-type layers 20are grown over any suitable substrate, such as, for example, sapphire orSiC. The p-layer surface is highly doped to form an ohmic contact with adie metallization layer 24 (e.g., Ag). Metallization 24 may be highlyreflective to light emitted by the active layer. Portions of the p-layer20 and active layer 18 are etched away during the LED forming process,and metal 50 (metallization layer plus bonding metal) contacts then-layer 16 on the same side of the device as the p-contact metal 24.

The n-metal 50 and p-metal 24 are bonded to the pads 22 on a packagesubstrate 12. An underfill material 52 may be deposited in the voidsbeneath the LED to reduce thermal gradients across the LED, to addmechanical strength to the attachment, and to prevent contaminants fromcontacting the LED material. The bond technology may be solder,thermocompression, interdiffusion, or a gold stud bump array bonded byan ultrasonic weld. The combination of the die metallization and bondmaterial is shown as metals 24 and 50 and may include a diffusionbarrier or other layers to protect the optical properties of themetallization layer adjacent the semiconductor material. The packagesubstrate 12 may be formed of the electrically insulating material AlN,with gold contact pads 22 connected to solderable electrodes 26 usingvias 28 and/or metal traces. Alternatively, the package substrate 12 maybe formed of a conducting material if passivated to prevent shorting,such as anodized AlSiC. The package substrate 12 may be thermallyconductive to act as a heat sink or to conduct heat to a larger heatsink.

The growth substrate may be removed using an excimer laser beam. Thelaser beam melts the GaN material at its interface with the growthsubstrate, allowing the growth substrate to then be lifted off.Alternatively, the growth substrate may be removed by etching such asRIE etching, by liftoff techniques such as etching away a layer betweenthe growth substrate and the LED layers, or by lapping.

The exposed, relatively thick GaN layer 16 is optionally thinned byetching using a dry etch such as RIE. In one example, the thickness ofthe GaN layer 16 being etched is 7 μm, and the etching reduces thethickness of the GaN layer 16 to approximately 1 μm. If the initialthickness of all the epitaxial LED layers is 9 μm, in this case theetching causes the total thickness of the LED layers to be 3 μm. Thetotal thickness of the semiconductor structure in a finished device maybe 10 μm or less in some embodiments, 5 μm or less in some embodiments,2 μm or less in some embodiments, and 1 μm or less in some embodiments.The thinning process removes damage caused by the laser lift offprocess, and reduces the thickness of the optically absorbing layersthat are no longer needed, such as a low temperature GaN nucleationlayer and adjacent layers. All or a portion of the n-type cladding layeradjacent to the active region is left intact.

The top surface of the LED (n-layer 16) is textured for increased lightextraction. In one embodiment, layer 16 is photo-electrochemicallyetched using a KOH solution 46. This forms a “white” roughness in theGaN surface (having n-type Si doping). This etching process can also beused to further thin the n-layer 16 and stop at a predeterminedthickness using an etch stop layer grown during the LED formationprocess, leaving a smooth surface. This latter approach is useful forresonant device designs. For such devices, a mirror stack (e.g., a Braggreflector) may now be deposited on the top surface of the LED.Additional light extraction techniques could include micron or nanometerscale patterned etching (dimple or photonic crystal).

In the device illustrated in FIG. 1, in general, the characteristic sizeof the surface texturing in either a surface with random texturing orwith ordered texturing is on the order of one wavelength of lightemitted by the active region. Performance of such devices depends on therelative efficiency of light-extracting process and of absorptionprocesses in the device, such as absorption by the active region and bythe metal contacts. Absorption processes typically amount to a fewpercent (1 to 10%) per bounce. Light extraction from a device isefficient if the light-extraction rate per bounce is stronger than theabsorption rate per bounce.

Light extraction from a textured surface can depend strongly on theangle of incidence of light. Light impinging on the surface at smallangles relative to a normal to the top surface, shown in FIG. 2 as light30, is easily extracted. Light impinging on the surface at large anglesrelative to a normal to the top surface, referred to herein as glancingangle light, shown in FIG. 2 as light 32, is more difficult to extract.Most of the glancing angle light is reflected back into the LED, eitherby specular reflection or by backscattering as illustrated in FIG. 2.The reflected light is susceptible to absorption. The extractionefficiency of glancing angle light, for example incident in the range ofangles between 70 and 90° relative to a normal to the top surface of thedevice, is only a few percent. This is illustrated in FIG. 8, whichshows the one-pass extraction for a plane wave impinging on a photoniccrystal versus angle (0° is perpendicular to the plane of the lightextraction surface, i.e. the top of n-type region 16). At large angles(glancing angles), the extraction is less than at small angles, thusrequiring more bounces for extraction.

Light which is backscattered at glancing angles mostly undergoesspecular reflection (as opposed to diffuse scattering) and keeps thesame incident angle. This is illustrated in FIG. 9 which shows theone-pass specular reflection versus angle (0° is perpendicular to theplane of the light extraction surface) for the same structure as FIG. 8.At glancing angles, a large fraction of the light undergoes specularreflection. The textured surface is therefore not a good mechanism forconverting glancing angle light to light propagating at smaller angles,which is more easily extracted. Since light emitted at glancingincidence angles represents a significant portion of light emitted bythe device (about 40% in some devices), it is desirable to extractglancing angle light in order to improve the extraction efficiency ofthe device. Although the results illustrated in FIGS. 8 and 9 werecalculated for a particular geometry of the patterned top surface of thedevice, the trends they illustrate (i.e. poor extraction and largebackscattering at glancing angles) hold for a variety of geometries ofthe patterned surface.

In accordance with embodiments of the invention, structures areincorporated into a III-nitride thin-film flip-chip light emittingdevice which may increase the extraction of light emitted at glancingincidence angles. In some embodiments, the device includes a structurethat directs light away from the metal contacts by total internalreflection. In some embodiments, the device includes extraction featureswithin the semiconductor structure which may extract glancing anglelight directly, or direct the glancing angle light into smallerincidence angles which are more easily extracted from the device.

FIGS. 3 and 4 illustrate devices with a low index of refraction layerdisposed between at least a portion of the semiconductor structure andthe metal p-contact. In both the devices illustrated in FIGS. 3 and 4,the low index layer preferably causes little or no optical loss. In someembodiments, the p-type region, low index layer, and p-contact areconfigured such that the composite reflectivity of the low index layerand reflective p-contact metal on the p-type region is greater than thereflectivity of the reflective p-contact metal only on the p-typeregion.

Adding a low index layer can enhance the reflectivity of the contact.The type of low index layer and its thickness are chosen such that thetotal reflection of light at useful angles is maximized, resulting in areflection that is superior to a reflective metal contact without a lowindex layer. FIGS. 14A and 14B illustrate how light at different anglesis reflected off the low index layer/metal reflective contact. Ray 66 ofFIG. 14A has an incident angle that is less than the critical angleθ_(c) between the GaN 20 (n=n_(GaN)) and the low index layer 36, 40(n=n_(low)), given by the formula θ_(c)=Sin⁻¹(n_(low)/n_(GaN)). A smallpercentage of ray 66 is able to reflect from the low index layer 36, 40immediately with no loss. Most of ray 66 penetrates the low index layer36, 40 and reflects off the metal 24. For ray 66, the round-trip loss inthe low index layer 36, 40 (i.e. the loss when light travels through thelow index layer, is reflected of the metal layer, then travels backthrough the low index layer) is preferably no more than the loss of theray reflecting directly off the metal layer 24 from the semiconductorstructure 20 (without an intervening low index layer). This loss definesa maximum thickness for the low index layer—which depends on theabsorption in the low-index layer—such that the reflectivity of thesemiconductor/low index layer/metal reflector is better than thereflectivity of a semiconductor/metal reflector.

Ray 70 of FIG. 14B is also within the critical angle, but the low indexlayer 36, 40 is thicker and some rays can be resonantly trapped in thelayer, which increases their absorption (by the metal 24 or by thelow-index layer 36, 40). This effect can lower the effectivereflectivity of the contact if the semiconductor 20, low index layer 36,40, and metal layer 24 indexes and thicknesses are not chosen properly.The behavior of rays 66 and 70 are shown in FIG. 10 for a SiO₂ low indexlayer. FIG. 10 is a plot of reflectivity as a function of angle ofincidence for devices with a GaN p-type region 20, a SiO₂ low indexlayer 36, and a Ag p-contact 24. Three thicknesses of SiO₂ are shown inFIG. 10, 0 nm (i.e. no low index layer), 70 nm, and 400 nm. For the thinSiO₂ layer (70 nm) there are no resonances below the critical angle(<40°) and the reflectivity is a smooth function of angle. Thereflectivity is higher than Ag only. For the thicker SiO₂ layer (400 nm)there are two resonances below the critical angle where light is trappedin the SiO₂ and the reflectivity suffers. To avoid these resonances, thethickness of the low index layer needs to be less than a half-wavelengththickness in the low-index layer (taking the mirror phase shift intoaccount). For most embodiments, the thickness of the dielectric layer isthin enough to avoid resonances, for instance less than 100 nm. In otherembodiments the dielectric is thick and can support resonances, but thethickness of the semiconductor layers is chosen to minimize or eliminatelight emission at these unfavorable angles.

Ray 68 of FIG. 14A shows the situation where the incidence angle isgreater than the critical angle, causing total internal reflection ofthis glancing angle light. Reducing the amount of light that is incidenton the metal contact by directing the light away by total internalreflection increases the reflectivity of the contact at angles greaterthan the critical angle. There is a minimum thickness for the low indexlayer so that a maximum in reflectivity can be achieved. Above the anglefor total internal reflection, light is an evanescent wave in the lowindex layer, with an exponential decay length L_(decay)=λ/[2π√(n_(GaN)²sin²θ−n_(low) ²)]—where λ is the wavelength (in vacuum), θ is the angleof light, and n_(GaN) and n_(low) are the optical indices of thep-material and of the low-index layer, respectively. Light does notsustain mirror losses if the thickness of the low-index layer is largeenough compared to L_(decay). Generally, L_(decay)˜40-80 nm depending onthe value of the θ and n_(low). In some embodiments, the thickness ofthe low-index layer is at least twice L_(decay). In other embodiments,the thickness is at least L_(decay).

The extraction efficiency of the device is improved by improving eitheror both the reflectivity of light traveling at incidence angles lessthan the critical angle (rays 66 and 70 in FIGS. 14A and 14B, above) ormore than the critical angle (ray 68 in FIG. 14A above). FIG. 15summarizes the effects described above in the case of a GaN/SiO₂/Agstructure. For a SiO₂ thickness t<100 nm, there are no resonances andthe reflectivity overall increases with t. For larger t, resonancesappear and decrease reflectivity at some angles. Two embodiments arerepresented by the two dashed lines, corresponding to t=100 nm and t=200nm. These thicknesses correspond to no resonance and one resonance inthe SiO₂ layer respectively, and both ensure a very high reflectivity(>99.9% for angles larger than 50°).

The semiconductor material at the interface with the low index layer istypically p-type GaN, which has an index of refraction of about 2.4. Insome embodiments, the low index layer has an index of refraction, n, of2 or less, more preferably 1.7 or less. By having an index of 2 or lessfor the low index layer, the critical angle is limited to no greaterthan ˜55°. Therefore, all light at angles greater than the criticalangle is totally internally reflected with maximum reflectivity. Thisincludes the glancing angle light—which is hardest to extract, as shownin FIG. 8. The low index layer need only be as thick as is required tocause total internal reflection of glancing angle light.

In the device illustrated in FIG. 3, regions 36 of a non-conductive lowindex layer are deposited between p-type region 20 and p-contact 24.Examples of suitable low index layers include dielectrics such as SiO₂(n=1.5), SiN, TiO₂, or Al₂O₃ and semiconductors such as ZnO. Thedielectric low index layer should be thick enough to ensure reflectionof glancing light (as described above); for example, at least 80 nm. Insome embodiments, the dielectric low index layer is thin enough to avoidresonances as described above, for instance less than 100 nm, or thinenough to support only one resonance, for instance less than 250 nm. Inother embodiments the low index layer is thicker and supportsresonances, but the thickness of the semiconductor structure is tuned toavoid emitting light at the angles corresponding to the resonancessupported by the low index layer. In some embodiments, the reflectivityof light incident at less than the critical angle is greater than 95%.In some embodiments, the reflectivity of light incident at greater thanthe critical angle is greater than 98%.

A dielectric low index layer may be deposited on the surface of p-typeregion 20 and patterned prior to formation of p-contact 24. Asemiconductor low index layer may be grown or deposited on the surfaceof p-type region 20. Current is injected in the semiconductor structurein the gaps 38 between the regions of low index material, wherep-contact 24 is in direct contact with p-type region 20. Gaps 38 arelarge enough and spaced close enough together that current spreads inp-type region 20 from the areas in contact with p-contact 24 to theareas shielded from the p-contact by low index material 36. Spreadingcurrent in p-type GaN is difficult because its resistivity is high, ˜1Ω-cm. For the contact to be effective, the gaps need to be close enoughtogether so current can spread under the non-conductive low index layer.The p-type GaN layers in III-Nitride LEDs tend to be thin (e.g., lessthan 0.5 μm), which also limits the current spreading capabilities ofthe layer. In some embodiments, gaps 38 may be at least 100 nm wide andspaced less than 2 μm apart in some devices, less than 0.5 μm apart insome devices. In general the ratio of the area of the gaps to the totalcontact area is kept low for high reflectivity, but high enough toprovide efficient current spreading. In some embodiments, low indexlayer covers 50% or more of the total area of the surface of the p-typeregion. The openings 38 in the low index layer may be formed by, forexample, imprinting, holography, or stepper/scanner lithographytechniques.

In the device illustrated in FIG. 3, and in other devices describedherein, the growth substrate may be removed from the device. Inembodiments where the growth substrate is removed, the top surface 34 ofthe device exposed by removing the substrate may be randomly roughenedor may be patterned with, for example, a photonic crystal. In someembodiments, the pattern of gaps 38 may be organized in a periodicfashion to increase or compliment the light extracting effect of thephotonic crystal formed in the top surface 34. For example, theparameters of the pattern of gaps 38 (such as the type of crystal orquasicrystal lattice, pitch, filling factor, depth and shape of thegaps) can be tuned to extract light which is not well extracted by thephotonic crystal formed in top surface 34. Also, the parameters can betuned to enhance the directionality of this extracted light so that itadds to the directional light extraction of the photonic crystal. In oneembodiment, the pitch and lattice type of the pattern of gaps 38 are thesame as that of the photonic crystal, for example, the pitch is on theorder of 200 to 600 nm.

In the device illustrated in FIG. 4, a conductive low index layer 40 isdisposed between p-type region 20 and p-contact 24. Because low indexlayer 40 is conductive, the entire interface between p-type region 20and p-contact 24 can be covered with low index layer 40. The low indexlayer also makes a good contact with the p-type layer 20. The specificcontact resistance is preferably 1×10⁻² ohm-cm² or less.

In some embodiments low index layer 40 is a doped oxide such as indiumtin oxide (ITO, n=1.5), InO, ZnO, Ga_(x)O_(y), or CuO. The oxide caneither be p-doped or n-doped, in which case a tunnel junction to thep-type region can be used. In some embodiments, the dopant is one of theconstituents of the oxide (such as tin in ITO); in others the dopant isan additional element (such as P for p-type ZnO). The concentration ofthe dopant is high enough to ensure low contact resistance and properelectrical injection, but low enough to avoid optical absorption. Forexample, the amount of tin in an ITO layer may vary between 0 and 10%.

In some embodiments, a thin layer of another material (for example, afew angstroms of a metal such as Ni) is disposed between thesemiconductor structure and low index layer 40, to enhance adhesion ofthe low index layer to the semiconductor structure and to improve thespecific contact resistance at the interface between the oxide and thep-type semiconductor material.

In order to reduce the index of refraction and therefore increase theindex contrast at the interface with the semiconductor, an oxide lowindex layer may be made porous, for example by electrical, chemical orelectro-chemical wet etching. Alternatively, a porous low index layermay be formed by evaporation at angle, resulting in columnar growth withair gaps in between the columns. Since low index layer 40 is thin, itmay be resistive. For example, low index layer 40 may have a resistanceof up to 1 Ω-cm, which is comparable to the resistance of p-type GaN.

In some embodiments, low index layer 40 is an epitaxially-grownsemiconductor layer. Typically such a low index layer is a III-nitridelayer such as AlInGaN, AlGaN, or AlInN, though non-III-nitride epitaxialmaterials such as ZnO are possible. A low index semiconductor layer maybe sufficiently doped for current to be directly injected from p-contact24 to p-type region 20 through the low index layer. Alternatively, inthe case of a thin lightly doped or undoped low index semiconductorlayer, current may be injected by tunneling. In the case of tunnelinjection, the surface of p-type region adjacent to the low indexsemiconductor layer may be highly doped to facilitate injection.

In some embodiments, a low index semiconductor layer is oxidized, inorder to reduce the index of refraction. FIG. 5 illustrates a portion ofa device with an oxidized low index layer. N-type region 16, lightemitting region 18, and p-type region 20 are grown over a substrate. Asemiconductor layer 42 that can be oxidized, such as AlInN, which may belattice-matched to GaN, is grown over p-type region 20, followed by ahighly doped p-type layer 46. Portions of highly doped layer 46 areremoved to expose portions of the underlying to-be-oxidized layer. Theremaining portions of highly doped layer 46 are protected by the maskused for patterning highly doped layer 46.

Portions of semiconductor layer 42 are then oxidized, for example byexposing the wafer, to which a small piece of In may be alloyed forcurrent access, to an electrolyte solution of nitrilotriacetic aciddissolved in a 0.3M solution of potassium hydroxide in water, to reach apH value of 8.5. A small current density of 20 μA/cm² is applied at athreshold voltage of about 3 V. The oxidation travels laterally, forexample at a rate between 5 and 20 μm per hour. Only the portions ofsemiconductor layer 42 exposed by patterning highly doped layer 46 areoxidized. After oxidation, oxide regions 44 are amorphous oxide layerssuch as Al_(x)O_(y) or Al_(x)In_(y)O_(z). At least some of the In in anAlInN layer generally remains in the oxide layer after oxidation. The Inmay or may not oxidize. Non-oxidized semiconductor material 42 remainsbetween oxide regions 44. For example, the index of AlInNlattice-matched to GaN is about 2.2 (an index contrast of 8% with GaN)while the index of the same oxidized material is about 1.8.

A p-contact 24 is deposited over the structure. Current is injected intolight emitting region 18 from the p-contact 24 in places where theremaining portions of highly doped layer 46 are aligned with conductivesemiconductor regions 42. Oxide regions 44 are not conductive, but causetotal reflection of light incident on the interface between oxideregions 44 and p-type region 20. Conductive semiconductor regions 42 maybe at least 100 nm wide and spaced less than 1 μm apart, in order toprovide sufficient current spreading in p-type region 20. As in thedevice illustrated in FIG. 3, the pattern of oxide regions 44 may beorganized in a periodic fashion to increase or compliment the effect ofa photonic crystal formed in the top surface of n-type region 16.

The distance between the reflective p-contact 24 and the light emittingregion 18 may be optimized to control the emission diagram inside thesemiconductor and the lifetime of carriers, and therefore impact theextraction efficiency and the far-field pattern of the device. Placementof the light emitting region is described in more detail in U.S. Pat.No. 6,903,376, which is incorporated herein by reference. The additionof a low index layer may increase the optical length from the lightemitting layers to the reflector. To achieve an optimized emissiondiagram, the phase shift of light from the center of the light emittingregion 18 to the metal mirror 24 (including the metal phase shift) needsto be resonant, as in a resonant cavity LED. In some embodiments, theoptical distance between the center of the light emitting region 18 andmetal reflector 24 is an odd multiple of a quarter wavelength of lightemitted by the light emitting region 18, minus the phase of thereflective metal 24.

FIGS. 6, 7, 11 and 12 illustrate devices including extraction featureswhich may extract glancing angle light directly, or direct the glancingangle light into smaller incidence angles which are more easilyextracted from the device. The devices of FIGS. 6, 7, 11 and 12 includemacroscopic light extraction features, extending from the top or thebottom surface of the semiconductor structure. The light extractionfeatures may be, for example, bumps or cones which interrupt thesemiconductor structure. The features illustrated in FIGS. 6, 11, and 12may be cavities etched in the semiconductor structure at the same timeas the mesa on which the n-contact is formed.

In the device illustrated in FIG. 6, two light extraction features 48and 54 are shown. The light extraction feature size, shape, and spacingare selected to direct glancing angle light out of the device, asillustrated by ray 60, or into a smaller incidence angle where it can bemore easily extracted. The light extraction features may extend throughthe entire thickness, as illustrated by feature 48, though they neednot, as illustrated by feature 54. In some embodiments, taller featuresmore efficiently redirect glancing angle light because a smallerfraction of the glancing angle light can propagate above the featurewithout being redirected. The features illustrated in FIG. 6 are filledwith a dielectric material, or with air. Dielectric material may beformed in the features at the same time as dielectric layer 56, which isdeposited and patterned to electrically isolate n-contact 50 from thelight emitting region and the p-type region.

In the device illustrated in FIG. 11, feature 57 is lined with a thindielectric layer (with a thickness on the order of a wavelength or less)and filled with a reflective metal deposited at the same time asp-contact 24. As described above, the dielectric layer is kept thin andits precise thickness is tuned in order to avoid optical resonances suchas those illustrated in FIG. 10, and thus ensure good reflectivity.

In the device illustrated in FIG. 12, the dielectric layer is notpresent at the top of the extracting feature, so electrical contact ismade between the metal lining the feature and the n-type region 16. Thefeature can then be used as an n contact, either replacing theconventional n-contacts of the device or supplementing them. In suchembodiments, the extracting feature is electrically isolated from thep-contact below the device layers, for example by a dielectric layerdeposited at the same time as the dielectric layer used to coat thefeature.

The distance between adjacent features is short enough that the glancingangle light reaches the features without being absorbed in thestructure. These features are spaced much farther apart, for examplebetween 10 and 300 μm apart, than the features formed for example in aphotonic crystal in the top surface 34 of the device, which are spaced,for example, less than 1 μm apart. Devices with larger absorptionrequire shorter distances. The absorption depends on the reflectivity ofthe mirrors and metal in the device, and also on the active region. Forexample, a device with more active material is in general moreabsorbing. The distance between features is large enough that only asmall fraction of the device's light emitting region area, for example,no more than 50%, is lost to the features. For instance, if the featuresare between 2 and 5 μm wide, an average separation of 50 to 200 μmbetween features corresponds to a loss in emitting area on the order of10%. In some embodiments, the features are sized and spaced such thatall trajectories of glancing angle light impinge on a feature within ashort enough distance, for example at most 50 μm. FIG. 13 shows a topview such an embodiment, where the features 48, 54, 57, and 62, asdescribed in the text accompanying FIGS. 6, 11, and 12, form cavities onwhich glancing light impinges after at most a few tens of microns oftravel within the device, while the fraction of the surface used by thefeatures is smaller than the surface dedicated to the p-contact. Thespacing 64 between features may be, for example, between 50 and 150 μm,often 100 μm. In general, the extracting features are located on theoutside of the device and within the device. They are not used toelectrically separate the device into more than one device, asillustrated in FIG. 13 where the shaded area represents the p-contact 24and also the p-type region below the p-contact (e.g. p-type region 20 ofFIG. 6). The features are designed so that p-contact is one continuouspiece, not separated throughout the device. In some embodiments, onlysome of the features also function as contacts to the n-type region. Thenumber of features functioning as contacts areas may be minimized toincrease the reflectivity of these features.

In general, the dimensions of these features are large, for exampleseveral times the wavelength of light, so that they reflect light in ageometric way. The sidewall angle of the features is chosen in order tomaximize their efficiency. Since glancing angle light propagates near90° in the material, it is expected that a feature with sidewall anglesnear 45°, for example, between 35 and 55°, will efficiently extractglancing angle light. In the case of a photonic crystal formed in thetop surface 34, the features' properties can further be optimized toincrease the directionality of the device by optimizing their sidewallangles and their in-plane distribution to extract light in preferentialdirections.

In the device illustrated in FIG. 7, features 58 are formed after thegrowth substrate is removed, for example at the same time top surface 34is roughened or textured with a photonic crystal structure. Cavities 58may have the same shape, size, and spacing as the features described inFIG. 6. The sidewalls of cavities 58 may be roughened or textured, asillustrated in FIG. 7, though they need not be. The sidewall of cavities58 may be coated with a material such as a metal, a dielectric, or acombination of the two.

Having described the invention in detail, those skilled in the art willappreciate that, given the present disclosure, modifications may be madeto the invention without departing from the spirit of the inventiveconcept described herein. For example, though in FIGS. 3, 4, 6, and 7,only one n-contact via is illustrated, a device may have multiplen-contact vias. Also, the features of the devices illustrated in FIGS.3, 4, and 5 may be combined with the features of the devices illustratedin FIGS. 6, 7, 11, 12, and 13. Therefore, it is not intended that thescope of the invention be limited to the specific embodimentsillustrated and described.

1. A device comprising: a semiconductor structure comprising a lightemitting layer disposed between an n-type region and a p-type region; areflective metal contact disposed on a bottom side of the semiconductorstructure and electrically connected to the p-type region; a materialdisposed between at least a portion of the reflective metal contact andthe p-type region, wherein a difference between an index of refractionof the material and an index of refraction of the p-type region is atleast 0.4; wherein: at least a portion of a top side of thesemiconductor structure is textured; and a distance between the texturedportion of the top side of the semiconductor structure and thereflective metal contact is less than 5 μm.
 2. The device of claim 1wherein a difference between an index of refraction of the material andan index of refraction of the p-type region is at least 0.7.
 3. Thedevice of claim 1 wherein: the light emitting layer comprises aIII-nitride material; and the reflective metal contact comprises silver.4. The device of claim 1 wherein the material is one of a dielectric, anoxide, a semiconductor, SiO₂, SiN, TiO₂, Al₂O₃, ITO, InO, ZnO, CuO,AlInGaN, AlGaN, AlInN, Al_(x)O_(y), Ga_(x)O_(y) and Al_(x)In_(y)O_(z).5. The device of claim 1 wherein an interface between the semiconductorstructure and the material is configured to reflect light incident onthe interface at angles greater than 70° relative to a normal to a majorplane of the light emitting layer.
 6. The device of claim 1 wherein acomposite reflectivity of the material and the reflective metal contacton the p-type region is greater than a reflectivity of the reflectivemetal contact in direct contact with the p-type region.
 7. The device ofclaim 1 wherein the material is configured such that a round-trip lossin the material is less than a loss of a visible spectrum wavereflecting off the reflective metal contact in direct contact with thep-type region.
 8. The device of claim 1 wherein the textured portion isone of randomly roughened and patterned with a photonic crystal.
 9. Thedevice of claim 1 wherein the reflective contact directly contacts thesemiconductor structure through openings formed in the material.
 10. Thedevice of claim 9 wherein nearest neighbor openings are spaced less than2 μm apart.
 11. The device of claim 1 wherein a thickness of thematerial is less than 500 nm.
 12. The device of claim 1 wherein athickness of the material is greater than 40 nm.
 13. The device of claim1 wherein a thickness of the material is less than half a wavelength oflight emitted by the light emitting layer.
 14. The device of claim 1wherein: a thickness of the material is more than half a wavelength oflight emitted by the light emitting layer such that light incident onthe material at a range of incident angles is trapped in the material;and the semiconductor structure is configured to minimize an amountlight emitted at the range of incident angles.
 15. A device comprising:a semiconductor structure comprising a III-nitride light emitting layerdisposed between an n-type region and a p-type region; and a pluralityof cavities extending into the semiconductor structure, wherein thecavities are configured to reflect light incident on the interface atangles greater than 70° relative to a normal to a major plane of thelight emitting layer.
 16. The device of claim 15 further comprising areflective metal contact disposed on a bottom side of the semiconductorstructure, wherein the plurality of cavities extend from the bottom sideof the semiconductor structure toward a top side of the semiconductorstructure.
 17. The device of claim 15 further comprising a reflectivemetal contact disposed on a bottom side of the semiconductor structure,wherein the plurality of cavities extend from a top side of thesemiconductor structure toward the bottom side of the semiconductorstructure.
 18. The device of claim 15 wherein the cavities areconfigured such that a photon traveling within the semiconductorstructure cannot travel further than 50 μm before interacting with acavity.
 19. The device of claim 15 wherein the cavities have sidewallsoriented at an angle between 35 and 55° relative to a major surface ofthe light emitting layer.
 20. The device of claim 15 wherein sidewallsof the cavities are coated with a dielectric material.
 21. The device ofclaim 15 wherein nearest neighbor cavities are spaced between 10 and 300μm apart.
 22. The device of claim 15 wherein at least one of thecavities is filled with metal that makes electrical contact to then-type region.
 23. The device of claim 15 wherein sidewalls of thecavities are roughened.
 24. The device of claim 15 wherein: at least oneof the cavities is filled with metal; and sidewalls of the cavity filledwith metal are coated with a dielectric that electrically isolates themetal from the semiconductor structure.
 25. The device of claim 15wherein the plurality of cavities does not create electrical isolationof any portion of the device.